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Silicon Carbide Sputtering Targets and Applications

Silicon carbide which has the chemical formula of SiC, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. Silicon Carbide (SiC) Sputtering Targets (Size:1'' ,Thickness:0.125'' , Purity: 99.5%) is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.
Now let's give an example of silicon carbide applications and take a look at how silicon carbide sputtering targets can be used in electronic and MEMS devices. Silicon carbide has intrinsic properties that make it a material of great interest for microelectronic and MEMS (Micro-Electro-Mechanical Systems) applications. In the last years, there has been much debate in the literature about how the incorporation of dopant elements (such as nitrogen, oxygen, aluminum, boron, phosphorus, etc.) during the growth of silicon carbide thin films by chemical vapor deposition (CVD) or physical vapor deposition (PVD)processes affects their properties. It has been noticed that the dopant incorporation allows controlling thin film properties such as optical band gap and electrical conductivity, which are quite attractive because make possible to obtain semiconductor or insulator silicon carbide based films. In general, the use of amorphous silicon carbide films has been preferred due to relatively their low growth temperature, which guarantees a larger compatibility with silicon-based technology. Nowadays, silicon carbide based thin films, such as SiCN, SiCO, SiCNO, SiCB, SiCBN and SiCP, have been extensively used in electronic and MEMS devices either as a semiconductor or as an insulator, depending on the film composition. These films have been shown promising for applications in diodes, thin-film transistors (TFTs) and MEMS devices.
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