Skip to main content

Silicon Carbide Sputtering Targets and Applications

Silicon carbide which has the chemical formula of SiC, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. Silicon Carbide (SiC) Sputtering Targets (Size:1'' ,Thickness:0.125'' , Purity: 99.5%) is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.
Now let's give an example of silicon carbide applications and take a look at how silicon carbide sputtering targets can be used in electronic and MEMS devices. Silicon carbide has intrinsic properties that make it a material of great interest for microelectronic and MEMS (Micro-Electro-Mechanical Systems) applications. In the last years, there has been much debate in the literature about how the incorporation of dopant elements (such as nitrogen, oxygen, aluminum, boron, phosphorus, etc.) during the growth of silicon carbide thin films by chemical vapor deposition (CVD) or physical vapor deposition (PVD)processes affects their properties. It has been noticed that the dopant incorporation allows controlling thin film properties such as optical band gap and electrical conductivity, which are quite attractive because make possible to obtain semiconductor or insulator silicon carbide based films. In general, the use of amorphous silicon carbide films has been preferred due to relatively their low growth temperature, which guarantees a larger compatibility with silicon-based technology. Nowadays, silicon carbide based thin films, such as SiCN, SiCO, SiCNO, SiCB, SiCBN and SiCP, have been extensively used in electronic and MEMS devices either as a semiconductor or as an insulator, depending on the film composition. These films have been shown promising for applications in diodes, thin-film transistors (TFTs) and MEMS devices.

Comments

Popular posts from this blog

Carbon Nanotube Threads

Since its discovery, carbon nanotube (CNT) has attracted many interests in different technology fields due to its extraordinary properties. Properties such as, high strength, great electrical and thermal conductivity, light weight and flexibility made CNT one of the best materials for wide range of applications. However, from its name it can be understood that CNT is a nanoscale material which is very small to be applied for the production of daily products. Researchers all around the world are working on finding methods and techniques which could produce new materials with the extraordinary properties of CNT. Image retrieved from:  https://worldindustrialreporter.com/strong-light-flexible-carbon-nanotubes-threads-with-ultrahigh-conductivity/ One of these research is focusing on the production of high strength threads that can be used in the manufacturing of fabrics, cables and ropes. An international group of scientists were able to produce a flexible conductive thread th...

Multi Walled Carbon Nanotube Dispersions

Carbon nanotubes (CNTs)  have attracted enormous attention in recent years due to its unique physical, electronic, optical and potential applications in materials science and nanotechnology. The van der Waals interaction between tubes, however, makes CNTs aggregate in most organic solvents and aqueous solutions, which is the major limitation of their practical applications.Various approaches have been studied to alter the CNT surface to promote the dispersion of individual nanotubes and prevent their reaggregation. On the basis of this widely accepted viewpoint, numerous techniques such as covalent bonding, surfactant coating and polymer wrapping have been developed for surface modification or sidewall functionalization.These methods, however, are complicated, time-consuming and cause permanent damage to the CNT structure and properties of the surface, which produces residues of the dispersion agent for the final product. Figure: Single Walled Carbon Nanotube (SWCNT) It ha...

Magnesium Oxide Nanoparticles/Nanopowder and Applications

General Information about Magnesium Oxide Magnesium oxide which has the chemical formula of MgO, is a white hygroscopic solid mineral that occurs naturally as periclase and is a source of Magnesium. It is a white powder at room temperature. Magnesium Oxide has very high melting point (2825  o C) and boiling point (3600  o C).                                                                                                                                                                                Magnesium Oxide Nanoparticles/Nanopowder an...