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CVD Graphene - Monolayer Graphene on SiO2/Si Substrate

Graphene, a single-atom layer of carbon atoms packed into a two-dimensional honeycomb lattice, has many unique properties like high carrier mobility, an ultra-thin body, high sustainable current, stretchability and a high transparency, and is thus considered a promising material for device applications such as in magnetic sensors, radio frequency analogelectronics, gas sensors,photon-detectors and flexible electronics.
The most important precondition for realizing such device-level applications is scalable production of uniform high-quality monolayer graphene. Many methods have been developed to prepare graphene, for example, mechanical exfoliation, chemical vapor deposition (CVD) on metal substrates, epitaxy on silicon carbide and reduction of graphite oxide. Among these approaches, mechanical exfoliation undoubtedly provides pristine graphene with the best quality; however the extremely low efficiency hinders its application.
The CVD method is the most competing one to combine mass production and high quality potentially, and is considered the most promising method for pushing graphene into commercial products. Compared to exfoliated graphene, graphene prepared through the CVD method usually exhibits low performance, like lower mobility, greater residual impurity and higher asymmetry between n- and p-branch, while recent studies have revealed significant progress in the quality of CVD graphene through improving the growth and transfer processes. As a result, CVD graphene with a high mobility has been obtained after being transferred to the Si/SiO2 substrate.
The main aim of transferring of graphene to Si/SiO2 to increase the mobility of graphene films. If we look at the studies related to this topic we see that Monolayer Graphene on SiO2/Si Substrate (2"), has better lubrication performance compared with graphene films itself. According to the studies it can be seen that monolayer graphene on SiO2/Si substrate acts as a very good solid lubricant by the reduced coefficient of friction.
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