Gallium arsenide (GaAs) is a compound of gallium and arsenic. It is a vital semiconductor and is commonly used to manufacture devices such as infrared emitting diodes, laser diodes, integrated circuits at microwave frequencies, and photovoltaic cells. Structure of Gallium arsenide (GaAs) Wafer In the Gallium arsenide (GaAs) Wafer , each gallium atom is bordered by arsenic atoms. 5 valence electrons of arsenic atoms and 3 valence electrons of gallium atoms share each other. So, each of the gallium and arsenic atom gets 8 valence electrons in the outer shell. It is also to be noted that a covalent bond exists between gallium and arsenic atom in the GaAs Wafer. The covalent bonds despite being strong can be broken with an enough amount of external energy. Properties of GaAs Wafer The main properties of gallium arsenide (GaAs) are given below: The Molar mass of Gallium arsenide (GaAs) is 144.64 g/mol. Gallium arsenide (GaAs) has the Melting point of 1238 °C. The...
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