Aluminum nitride is a chemical compound with the formula of AlN.
Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment.
Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications.
Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. For detailed information you may click the link given below:
AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system. You may see components of this system below.
For detailed information you may read the paper by clicking the link given below:
You may see our complete aluminum nitride sputtering target product range below.
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