Nanografi Nanotechnology

Tantalum carbides form a family of binary chemical compounds of  tantalum  and carbon with the empirical formula TaC x , where x usually varies between 0.4 and 1. Tantalum carbides are extremely hard, brittle, refractory ceramic materials with metallic electrical conductivity. They appear as brown-gray powders, which are usually processed by sintering. TaC (Tantalum Carbide) Nanoparticles (99.5+%, 950 nm, Cubic)  have high purity, small diameters, even distribution, large specific surface area, high surface activity and low apparent density, as well as the excellent mechanics, electricity and chemical properties. Tantalum carbide nanoparticles have higher hardness, melting point, wear resistance and low thermal expansion coefficient and high temperature elevated strength. Nanoparticles of tantalum carbides exhibit superior mechanical properties and their tailored particle size and shape is for improved sintering and densification. Tantalum carbide nanoparticles are suitable to cut

Silicon carbide  is an important non-oxide ceramic which has diverse industrial applications. Silicon carbide has exclusive properties such as high hardness and strength, chemical and thermal stability, high melting point, oxidation resistance, high erosion resistance, etc. All of these qualities make silicon carbide a perfect candidate for high power, high temperature electronic devices as well as abrasion and cutting applications. As mentioned above silicon carbide is a promising ceramic for various industrial applications thanks to its excellent properties. Silicon carbide is a binary compound semiconductor consisting of carbon and silicon, where each atom is sp 3  -hybridized and forms four bonds to four other atoms of the opposite kind. On the other hand, the crystal structure gives rise to polytypism, which is a one-dimensional polymorphism. Unlike most other semiconductors, which only occur in one or two different crystal structures each, silicon carbide exists in over 250 kn

Silicon nitride is a chemical compound with the chemical formula of Si 3 N 4 . Silicon nitride is a white, high-melting-point solid that is relatively chemically inert and very hard material. Silicon nitride is a highly stable covalent compound with great application value in many fields due to good corrosion resistance and excellent resistance to temperature change. Also silicon nitride may be an effective filler to improve the performance of polymer materials. Well what about  silicon nitride nanoparticles  and usage areas? As all we know nanomaterials have been a fast-growing field of research in the past 30 years. In the beginning, metals were mainly investigated. Later, a large amount of research was conducted on nanoceramic materials. In addition to excellent superplasticity, increased hardness, bending strength, and abrasive wear resistance have also been observed in these nanoceramics. Because of its superior properties, many studies have also been carried out to fabrica

Boron carbide  which has the chemical formula of B 4 C is one of the hardest materials among the ceramics materials after diamond and boron nitride. In addition to its hardness, it has high thermal stability, low density, chemical inertness and neutron capture property. At temperature above 1200  o C, its hardness exceeds that of the diamond. Thus, it is a crucial material for high technology applications such as abrasive for polishing and grinding media, ceramic amour applications for personal purpose and equipment, blasting nozzles, ceramic bearings, semiconductor applications for dielectric barriers, medical and nuclear applications. B4C (Boron Carbide) Nanoparticles (99.5+%, 40-60nm, Hexagonal)  show an outstanding hardness among the ceramic materials. Therefore, boron carbide nanoparticles are a suitable material for many high performance applications. Boron carbide nanoparticles can be used as polishing, lapping and grinding material for hard materials such as cemented carbide

Titanium carbide which has the chemical formula of TiC attracted great interest for many structural applications due to its extremely high melting temperature, high hardness, high chemical resistance and good electrical conductivity. Therefore titanium carbide can be used in cutting tools, grinding wheels, wear-resistant coatings, high temperature heat exchangers, magnetic recording heads, turbine engine seals, and bullet-proof vests, etc. In addition, a promising field of application comprises plasma and flame spraying processes in air, where titanium carbide-based powders show high-phase stability. TiC(Titanium Carbide Powder) (325 mesh, 99,9+%)  can also be used in biomedical implant devices. Materials used for biomedical implant devices must satisfy a variety of property demands, which are often mutually exclusive. Further, different parts of a device demand different material properties. These factors often make it difficult to manufacture a medical device using a single materi

Transparent conductive thin film electrodes are widely used for liquid crystal displays (LCDs), touch screens, solar cells, and flexible displays. For these applications generally indium tin oxide is used. But indium tin oxide has some disadvantages like cracking on flexible surfaces, cost and requiring high temperature during thin film fabrication process. Silver (Ag) nanowire is an promising alternative for the use of  indium tin oxide  for this applications. Silver nanowires have been attracting more and more attention because of their intriguing electrical, thermal, and optical properties.  Silver  has the highest electrical conductivity (6.3 × 107 S/m) among all the metals, by virtue of which silver nanowires are considered as very promising candidates in flexible electronics. One of the studies related to this subject showed that the cast silver nanowires thin film used as transparent electrode showed equal merit or better than that as compared with sputter-coated ITO in solar c

Since graphene was discovered in 2004, the study of graphene has never ceased.  Graphene  is a two-dimensional network carbon nanomaterial. The carbon atoms in graphene form a unique two-dimensional hexagonal honeycomb lattice structure by sp 2  hybridization. This monatomic layer structure makes graphene the thinnest and strongest material in the world. Graphene also has excellent physical and chemical properties, such as mechanical properties, thermal properties, electrical properties, and optical properties. Therefore, graphene has a wider value and prospects for practical application compared with other members of the carbon nanomaterials family, namely zero-dimensional fullerenes and one-dimensional  carbon nanotubes . In recent years, graphene has often been combined with polymer materials, ceramic materials, and metal materials to prepare graphene-reinforced composites, which not only makes the physical and chemical properties of the composite materials be greatly improved, b

Graphene , a single-atom layer of carbon atoms packed into a two-dimensional honeycomb lattice, has many unique properties like high carrier mobility, an ultra-thin body, high sustainable current, stretchability and a high transparency, and is thus considered a promising material for device applications such as in magnetic sensors, radio frequency analogelectronics, gas sensors,photon-detectors and flexible electronics. The most important precondition for realizing such device-level applications is scalable production of uniform high-quality  monolayer graphene . Many methods have been developed to prepare graphene, for example, mechanical exfoliation,  chemical vapor deposition (CVD)  on metal substrates, epitaxy on silicon carbide and reduction of graphite oxide. Among these approaches, mechanical exfoliation undoubtedly provides pristine graphene with the best quality; however the extremely low efficiency hinders its application. The CVD method is the most competing one to combin

Cadmium sulfide is the inorganic compound with the formula CdS.  Cadmium Sulfide Nano powder (CdS, 99.95+%,   5 nm)  is a yellow solid. It occurs in nature with two different crystal structures as the rare minerals greenockite and hawleyite. As a compound that is easy to isolate and purify, cadmium sulfide the principal source of cadmium for all commercial applications. Its vivid yellow color led to its adoption as a pigment for the yellow paint "cadmium yellow" in the 18th century. The nanoparticles of  cadmium sulfide  show unique physical, chemical and structural properties from the bulk. The melting point, electronic absorption spectra, band gap energy crystal structure, and other properties of cadmium sulfide nanoparticles are affected by size. Thus, cadmium sulfide on the whole is an attractive system for practicing synthetic chemistry for nanocrystals and for understanding the chemistry, growth history of nanomaterials and also for various technical applications.

Titanium Carbide (TiC) Sputtering Targets (Size:1'' ,Thickness:0.250'' , Purity: 99.5%) , which has the chemical formula of TiC, is an extremely hard refractory ceramic material. It has the appearance of black powder. Titanium carbide is used in preparation of cermets, which are frequently used to machine steel materials at high cutting speed. It is also used as an abrasion-resistant surface coating on metal parts, such as tool bits and watch mechanisms and as a heat shield coating for atmospheric reentry of spacecraft. Titanium carbide thin films have been classically used as protective hard coatings due to the good mechanical properties like high hardness, corrosion resistance, and low wear properties, that sustained up to 400  o C. Recently, this material has increased its technological interest because of its use as composite coatings TiC–C. For the deposition of  titanium carbide , several processes are used: chemical vapour deposition (CVD), plasma assisted che

Titanium boride, which has the chemical formula of TiB 2 , is a well-known ceramic compound with hexagonal structure. The high hardness and Young's modulus of  Titanium Boride (TiB2) Sputtering Targets (Size:1'' ,Thickness:0.250'' , Purity: 99.5%)  as well as its chemical resistance are attributed to crystal structure and atomic bonding of the compound. Due to these properties, titanium boride films have been considered as protective coatings for several applications, including wear and corrosion protection of magnetic recording media and cutting tools.  Titanium boride  thin films were obtained by various techniques, such as reactive sputtering, plasma enhanced CVD, ion beam sputtering, pulsed laser deposition and rf- and dc-magnetron  sputtering . Among these techniques, dc-magnetron sputtering appears to be the most appropriate method for protective coatings applications due to the low deposition temperature, the possibility of using substrates with complicate

Tin oxide, also known as stannic oxide, is the inorganic compound with the chemical formula of SnO 2 . The mineral form of tin oxide is called as cassiterite, and this is the main ore of tin. It is a colourless, diamagnetic, amphoteric solid. Now let's look at how  Tin Oxide (SnO2) Sputtering Targets (Size:1'' ,Thickness:0.125'' , Purity: 99.99%)  can be used. The use of low-emissivity or energy saving glass has become very popular in the modern day building design. This energy saving property is achieved by applying a thin metal oxide coating on one side of the glass. Materials used for the coating are  indium tin oxide , zinc oxide doped with aluminum and tin oxide. Among those, tin oxide is the cheapest and cost efficient material. Typically,  tin oxide sputtering targets  is a transparent n-type semiconductor. Tin oxide thin film has low electrical resistance and high optical transparency in the visible range of the electromagnetic spectrum. Over past decades

Tantalum oxide, also known as tantalum(V) oxide, is the inorganic compound with the formula Ta 2 O 5 . It is a white solid that is insoluble in all solvents but is attacked by strong bases and hydrofluoric acid.  Tantalum Oxide (Ta2O5) Sputtering Targets (Size:2'' ,Thickness:0.125'' , Purity: 99.99%)  is an inert material with a high refractive index and low absorption which makes it useful for coatings. It is also extensively used in the production of capacitors, due to its high dielectric constant. Tantalum oxide films are of interest for applications in high temperature resistance, anti-reflection coatings for solar cells, optical waveguide, oxygen sensors, and capacitor dielectric materials. In recent years they have received increasing attention as an alternative dielectric to replace thin SiO, films for storage capacitors in very large-scale-integrated memory cells and as gate insulators in metal-oxide-semiconductor devices. Tantalum oxide films can be formed

Zinc (Zn) Sputtering Targets (Size:1'' ,Thickness:0.250'' , Purity: 99.99%)  can be used in many various applications. After doping alumina to zinc oxide sputtering targets application areas can be extended. Now let's see the properties of alumina doped  zinc oxide sputtering targets . Transparent conductive oxides have been extensively studied because of being one of the most important components for large area electronics devices such as solar cells, flat panel displays, optical sensors or touch screens. For the choice of the proper TCO, it has to be taken into account that its optoelectronic properties have a big influence on device performance. In the field of photovoltaic applications, the main criteria that transparent conductive oxides should fit are the following: first, to be highly transparent in the visible wavelength range where the solar cell is operating to minimize the photon absorption; second, to have high conductivity to reduce the resistive los

Zinc sulfide is an inorganic compound with the chemical formula of ZnS. This is the main form of zinc found in nature, where it mainly occurs as the mineral sphalerite. Zinc Sulfide (ZnS) Sputtering Targets (Size:1'' ,Thickness:0.125'' , Purity: 99.99%)  is an important wide band gap semiconductor material with extensive potential applications, such as flat-panel displays, sensor, light-emitting diodes, photodetectors and solar cells. In the important application of photovoltaics,  zinc sulfide sputtering targets  can be used as buffer layer material of CuInGaSe 2  (CIGS), Cu 2 ZnSnS 4  (CZTS) thin-film solar cells. Compared to cadmium sulfide used commonly as buffer layer material, zinc sulfide has some advantages which are nontoxic, abundant, cheap, lattice matched with CIGS or CZTS absorber, possessing wide band gap. Zinc sulfide is a direct band gap n type semiconductor. The band gap of zinc sulfide is in the range of 3.2 ~ 3.9 eV, while the band gap of cadmium s

Zinc oxide is an inorganic compound with the chemical formula of ZnO.  Zinc Oxide (ZnO) Sputtering Targets (Size:1'' ,Thickness:0.125'' , Purity: 99.9%)  is a white powder that is insoluble in water, and it is widely used as an additive in numerous materials and products including rubbers, plastics, ceramics, glass, cement, lubricants, paints, ointments, adhesives, sealants, pigments, foods, batteries, ferrites, fire retardants, and first-aid tapes. Zinc oxide sputtering target is a material that possesses versatile mechanical, electrical, chemical, and optical properties. Because of its unique physical properties,  zinc oxide sputtering target  has drawn broad attentions in different fields and been utilized in a wide range of applications. In particular, using piezoelectric zinc oxide thin films to design sensors and actuators has been studied with demonstrated results, including surface acoustic wave device, acousto-optical device, acoustic microscopy, electromech

Ytterbium oxide is the chemical compound with the chemical formula of Yb 2 O 3 . Ytterbium Oxide is one of the more commonly encountered compounds of ytterbium. One of the application of  Ytterbium Oxide (Yb2O3) Sputtering Targets (Size:1'' ,Thickness:0.125'' , Purity: 99.99%)  is deposition on silicon materials. As all we may know the enormous growth and the significant progress of information technology in the modern world are based to a very large extent on the  SiO2 /Si  interface properties. The industry’s demand for greater integrated circuit functionality and performance at lower cost requires an increased circuit density, which is translated into a higher density of transistors on a wafer. Currently, this need is satisfied by introducing advanced materials in the gate of the transistors. By employing nitride/oxynitride gate stacks, functional complementary metal–oxide–semiconductor transistors with physical gate thicknesses ,4 nm have been demonstrated. Unf