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Silicon Carbide Nanoparticles/Nanopowder and Applications

General Information about Silicon Carbide 
                                   
Silicon carbide (SiC), is a chemical compound containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite. Synthetic SiC powder has been mass-produced since 1893. This compound has a very high melting point which is 2730 oC.

Applications of Silicon Carbide Nanoparticles/Nanopowder                                                                                            
                      
Silicon carbide nanoparticles/nanopowder are very hard materials and this property make them useful in ceramic applications such as ceramic bearing, textile ceramics, high frequency ceramics and ceramic engine parts. Silicon Carbide nanoparticles/nanopowder can be used for manufacturing of rubber tires. In order to obtain mirror coatings for high ultraviolet environments Silicon Carbide nanopowders/nanoparticle can be used. High-temperature spray nozzles such as those used in aeronautics, heating elements, sealing valves, and other mechanical products intended to resist extreme temperatures utilize Silicon Carbide nanoparticles/nanopowder in their construction. Silicon Carbide Nanoparticles/Nanopowder also can be used to produce various abrasive surfaces and substances, including polishing abrasives, the surfaces of grinding tools, actual grinding materials, and related products. Silicon carbide nanopowders/nanoparticle have also high thermal conductivity. Silicon Carbide nanopowders/nanoparticle can be used in high temperature sealing valves, high temperature spray nozzles, and high temperature fluid transport parts. In order to increase strength and heat resistance of composite materials Silicon Carbide Nanoparticles/ Nanopowder can be used.

Technical Properties of Our Silicon Carbide (SiC) Beta Nanoparticles/Nanopowder, 99.5% 20 nm Laser Synthesized Product
Purity (%)99.5
Colorgrayish white
Average Particle Size (nm)20
Bulk Density (g/cm3)0.03
True Density (g/cm3)3,32
Specific Surface Area (m2/g)80.0-130.0
Morphologycubic
Manifacturing Methodlaser synthesized
You may order Silicon Carbide (SiC) Beta Nanoparticles/Nanopowder, 99.5% 20 nm Laser Synthesized from the link below:

Technical Properties of Our Silicon Carbide (SiC) Beta Nanoparticles/Nanopowder, 99.5+%, 50-70 nm Product
Purity (%)99.5+
Colorgrayish white
Average Particle Size (nm)50-70
Bulk Density (g/cm3)0.05
True Density (g/cm3)3,32
Specific Surface Area (m2/g)40.0-85.0
Zeta Potential (mV)-27,5
Morphologycubic
Manifacturing MethodCVD
You may order Silicon Carbide (SiC) Beta Nanoparticles/Nanopowder, 99.5+%, 50-70 nm from the link below:

Technical Properties of Our Silicon Carbide (SiC) Beta Nanoparticles/Nanopowder, 99.5+%, <70 nm Product
Purity (%)99.5+
Colorgrayish white
Average Particle Size (nm)<70
Bulk Density (g/cm3)0.05
True Density (g/cm3)3,32
Specific Surface Area (m2/g)20.0-55.0
Zeta Potential (mV)-27,5
Morphologycubic
Manifacturing MethodCVD
You may order Silicon Carbide (SiC) Beta Nanoparticles/Nanopowder, 99.5+%, <70 nm from the link below:

Technical Properties of Our Silicon Carbide (SiC) Beta Nanoparticles/Nanopowder, 99.5+% , 790 nm Product
Purity (%)99.5+
Crystal Typebeta
Average Particle Size (nm)790
Density (g/cm3)3,22
Decomposition Temperature (K)2973.0
Hardness (Mohs)9,5
Thermal Expansion Coefficient (373k)6.7 × 10-6
Thermal Expansion Coefficient (1173k)3.0 × 10-6
Heating Power (KJ/mol)30.34
Compressibility Coefficient0.2 × 10-6
You may order Silicon Carbide (SiC) Beta Nanoparticles/Nanopowder, 99.5+% , 790 nm from the link below:

Technical Properties of Our Silicon Carbide (SiC) Beta 99.5+%,<2,6 um whisker Product
Purity (%)99.5
Crystal Typebeta
Daimeter (um).2,6
Length/Diameter≥20
Density (g/cm3)3,22
Decomposition Temperature (K)2973.0
Hardness (Mohs)9,5
Thermal Expansion Coefficient (373k)6.7 × 10-6
Thermal Expansion Coefficient (1173k)3.0 × 10-6
Heating Power (KJ/mol)30.34
Compressibility Coefficient0.2 × 10-6
You may order Silicon Carbide (SiC) Beta 99.5+%,<2,6 um from the link below:

Technical Properties of Our Silicon Carbide (SiC) Beta 99.5+%, D50 1.5-35 um Product
Purity (%)99.5+
Crystal Typebeta
Average Particle Size (um)01.05.1935
Density (g/cm3)3,22
Decomposition Temperature (K)2973.0
Hardness (Mohs)9,5
Thermal Expansion Coefficient (373k)6.7 × 10-6
Thermal Expansion Coefficient (1173k)3.0 × 10-6
Heating Power (KJ/mol)30.34
Compressibility Coefficient0.2 × 10-6
You may order Silicon Carbide (SiC) Beta 99.5+%, D50 1.5-35 um from the link below:

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