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Germanium Sputtering Targets and Applications

Germanium is a chemical element with the symbol Ge and atomic number 32. Germanium is a lustrous, hard, grayish-white metalloid in the carbon group, chemically similar to its group neighbors tin and silicon.
Germanium sputtering targets can be used in transistors and electronic devices as a semiconductor. Nowadays, germanium is used in fibre-optic systems, infrared optics, solar cell applications, and light-emitting diodes (LEDs).
Compounds made of germanium are also used in polymerization reactions as catalysts. Also in nanowires germanium compounds are used. In organometallic chemistry the element forms a large number of organometallic compounds, such as tetraethylgermane, are useful.
Germanium sputtering target has a similar structure to silicon, however, when we compare these two elements germanium offers several benefits like faster carrier mobility, smaller band gap and lower process temperatures. Also, the germanium has larger Bohr radius than silicon and this property allows for quantum effects to appear in nanostructures exhibiting larger sizes. Germanium is compatible with complementary metal oxide semiconductor technology and the production of porous germanium thin films could be used for integration of optoelectronic devices in silicon microelectronic technology.
Porous germanium thin films can be obtained by different techniques like anodization and electrochemical etching, spark processing or inductively coupled plasma chemical vapor deposition.
For detailed information about germanium and its usage as sputtering targets you may check the links given below:

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