Float-Zone Silicon (FZ-Si) wafers are the high purity and newer alternative to to Czochralski (CZ-Si) wafers. These wafers have high temperature capabilities and a low concentration of light impurities, such as carbon and oxygen, which can be prevalent in Czochralski (CZ-Si), are extremely low with FZ-Si wafers. However, Float-Zone silicon’s (FZ-Si) mechanical strength can be improved by deliberately adding nitrogen to it in the growth process, which also helps to control microdefects. Float-Zone silicon (FZ-Si) wafers are generally, not greater than hundred and fifty millimeters. That is due to surface tension effects during the growth process. Float-Zone silicon’s (FZ-Si) impurity enables it to undergo a lighter doping process. In some cases, Float-Zone silicon produce high resistivity measurements that reach high heights. Float-zone silicon is obtained by the Float-Zone (FZ) method, based in the vertical zone-melting principle that was invented by Theuerer in 1962 at Bell Lab...
Since its foundation in 2011, Nanografi Nano Technology has been manufacturing and supplying advanced nano- and micromaterials materials, carbon materials [graphene, graphene oxide (GO) reduced graphene oxide (rGO), carbon nanotubes (CNT)], wafers, sputtering materials, electrode materials for batteries and supercapacitors as well as industrial equipment. We are proud to have gained the experience of working and cooperation in the market of over 100 countries worldwide.